System and method for providing a buried thin film resistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S359000, C257S379000, C257SE27047

Reexamination Certificate

active

07808048

ABSTRACT:
A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. A layer of dielectric material is formed over the resistor protect layer. The dielectric material is masked and dry etched to leave a first portion of dielectric material over a first end of the thin film resistor and a second portion of dielectric material over a second end of the thin film resistor. The resistor protect layer is then wet etched using the first and second portions of the dielectric material as a hard mask. Then a second dielectric layer is deposited and vias are etched down to the underlying portions of the resistor protect layer.

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patent: 2004/0140508 (2004-07-01), Sengoku et al.
Rodney Hill, et al., “System and Method for Providing a Dual Via Architecture for Thin Film Resistors”, U.S. Appl. No. 12/217,877, filed Jul. 9, 2008.

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