Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2000-09-29
2001-08-07
Nelms, David (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S225500
Reexamination Certificate
active
06272040
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to magnetoresistive memory technology, and more particularly to a system and method for programming a magnetoresistive memory array by applying a current on a memory line aligned along the easy axis of the memory array, where the current generates a magnetic field that is independently sufficient to program two or more magnetoresistive memory elements coupled along the memory line.
RELATED ART
Magnetoresistive memory technology is currently being developed for memory devices such as magnetoresistive random access memory (MRAM) devices and the like. Integration of MRAM technology into complimentary metal oxide semiconductor (CMOS) is also currently being developed. Various MRAM technologies, fabricating methods, and related capabilities are described in various issued patents, including U.S. Pat. No. 5,940,319 entitled “Magnetic Random Access Memory and Fabricating Method Thereof”, U.S. Pat. No. 5,732,016 entitled “Memory Cell Structure in a Magnetic Random Access Memory and a Method For Fabricating Thereof”, and U.S. Pat. No. 5,703,805 entitled “Method For Detecting Information Stored in a MRAM Cell Having Two Magnetic Layers in Different Thicknesses”, which are hereby incorporated by reference in their entirety.
In general, a magnetic memory element has a structure which includes ferromagnetic layers separated by a non-magnetic layer. Information is stored as directions of magnetization vectors in magnetic layers. Magnetic vectors in one magnetic layer, for instance, are magnetically fixed or pinned, while the magnetization direction of the other magnetic layer is free to switch between the same and opposite directions as information which are called “Parallel” and “Antiparallel” states, respectively. In response to Parallel and Antiparallel states, the magnetic memory element represents two different resistances. The resistance indicates minimum and maximum values when the magnetization vectors of two magnetic layers point in substantially the same and opposite directions, respectively. Accordingly, a detection of changes in resistance allows an MRAM device to provide information stored in the magnetic memory element.
MRAM technology is very versatile and cost effective and is intended to replace other memory types including FLASH-type memories, dynamic RAMS (DRAMs), static RAMs (SRAMs), etc. Memory devices are usually only part of an overall system which may further include processing devices, controllers, and various other analog functional modules and devices. The challenge is to incorporate MRAM technology in the most efficient and cost effective manner.
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Nelms David
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