Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-25
2011-01-25
Smith, Zandra (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21506
Reexamination Certificate
active
07875546
ABSTRACT:
A system and method are disclosed for preventing metal corrosion on bond pads. During manufacture of an integrated circuit device an anti-reflective coating (ARC) layer is applied to a metal stack of a bond pad. A mask and etch process is applied to etch an aperture through the ARC layer down to the metal stack. Then a passivation layer is applied to cover the ARC layer and the aperture through the ARC layer. Then another mask and etch process is applied to etch a bond pad opening through the passivation layer inside the ARC layer aperture down to the metal stack. Interior edge portions of the passivation layer seal the interior edge portions of the ARC layer aperture to prevent corrosion of the ARC layer due to high temperatures, high humidity and corrosive materials encountered in subsequent assembly operations of the integrated circuit device.
REFERENCES:
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5563762 (1996-10-01), Leung et al.
patent: 5798568 (1998-08-01), Abercrombie et al.
patent: 5814563 (1998-09-01), Ding et al.
patent: 5930664 (1999-07-01), Hsu et al.
patent: 6006764 (1999-12-01), Chu et al.
patent: 6177355 (2001-01-01), Shields et al.
patent: 6221752 (2001-04-01), Chou et al.
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6593222 (2003-07-01), Smoak
patent: 6677226 (2004-01-01), Bowen et al.
patent: 6750129 (2004-06-01), Yang et al.
patent: 6866943 (2005-03-01), Friese et al.
patent: 6924172 (2005-08-01), Roche et al.
patent: 2005/0116357 (2005-06-01), Fitzsimmons et al.
patent: 2007/0238304 (2007-10-01), Wu
Thomas J. Barbieri et al., “Vanishing TiN ARC Coating as an Indicator of EOS in Aluminum Top Metal Lines”, Proceedings of the 32nd International Symposium for Testing and Failure Analysis, Nov. 12-16, 2006, pp. 461-468.
National Semiconductor Corporation
Smith Zandra
Withers Grant S
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