Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-20
2011-11-01
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21577, C257SE21579
Reexamination Certificate
active
08049335
ABSTRACT:
Novel interconnect structures possessing a OSG or polymeric-based (90 nm and beyond BEOL technologies) in which advanced plasma processing is utilized to reduce post lithographic CD non-uniformity (“line edge roughness”) in semiconductor devices. The novel interconnect structure has enhanced liner and seed conformality and is therefore capable of delivering improved device performance, functionality and reliability.
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Dalton Timothy J.
Della Guardia Ronald A.
Fuller Nicholas C.
International Business Machines - Corporation
Kebede Brook
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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