Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-03-15
2011-03-15
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S783000, C438S591000, C438S775000, C438S308000
Reexamination Certificate
active
07906441
ABSTRACT:
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
REFERENCES:
patent: 5478780 (1995-12-01), Koerner et al.
patent: 6191052 (2001-02-01), Wang
patent: 6350321 (2002-02-01), Chan et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2003/0140852 (2003-07-01), Schatzeder et al.
Alshareef Husam N.
Bevan Malcolm J.
Bu Haowen
Niimi Hiroaki
Brady III Wade J.
Choudhry Mohammad
Garmer Jacqueline J.
Pham Thanh V
Telecky , Jr. Frederick J.
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