Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-09-09
2008-09-09
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C438S018000, C029S593000
Reexamination Certificate
active
11690708
ABSTRACT:
The invention comprises devices and methods for determining residual stress in MEMS devices such as interferometric modulators. In one example, a device measuring residual stress of a deposited conduct material includes a material used to form a MEMS device, and a plurality of disconnectable electrical paths, wherein said plurality of paths are configured to disconnect as a function of residual stress of the material. In another example, a method of measuring residual stress of a conductive deposited material includes monitoring a plurality of signals, each of said plurality of signals being associated with one of a plurality of test structures, said plurality of test structures each being configured to change the associated signal upon being subject to a predetermined amount of residual stress, sensing a change in said plurality of signals, and determining a residual stress level in said material based on the sensed change in the plurality of signals.
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Pierron Olivier
U'Ren Gregory
Knobbe Martens Olson & Bear LLP
Pert Evan
Qualcomm Mems Technologies, Inc.
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