System and method for manufacturing an out of plane...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S623000, C438S618000, C438S672000, C257SE21022

Reexamination Certificate

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10861563

ABSTRACT:
A system and method is described for manufacturing an out of plane integrated circuit inductor. A plurality of parallel metal bars are formed on a substrate and covered with a first passivation layer. A ferromagnetic core is then deposited over the first passivation layer with its length perpendicular to the plurality of parallel metal bars. A second passivation layer is deposited over the ferromagnetic core and vias are etched through the passivation layers to the alternate ends of the underlying parallel metal bars. A plurality of cross connection metal bars are then formed on the second passivation layer with vertical portions that fill the vias and connect the alternate ends of the plurality of parallel metal bars to form an inductor coil. A third passivation layer is then deposited over the cross connection metal bars.

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Chua, Christopher L., et al, “Out-of-Plane High-Q Inductors on Low-Resistance Silicon,” Journal of Microelectromechanical Systems, vol. 12, No. 6, Dec. 2003, pp. 989-995.
Carchon, G., et al., “Wafer-Level Packaging Technology for Extended Global Wiring and Inductors,” IEEE, 2003, pp. 103-106.

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