Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-11-15
2010-10-19
Rossoshek, Helen (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C430S005000
Reexamination Certificate
active
07818711
ABSTRACT:
The present application is directed a method for determining the position of photomask patterns in a mask making process. The method comprises providing one or more mask rules defining the minimum spacing between photomask patterns. The method further comprises determining the position of a first photomask pattern relative to an adjacent second photomask pattern, the first photomask pattern having a critical edge for defining a critical dimension of a first device structure and a non-critical edge for defining a non-critical dimension. The non-critical edge is attached to the critical edge so that the positioning of the non-critical edge will affect the length of the critical edge. The non-critical edge of the first photomask pattern is positioned a distance X from an edge of the second photomask pattern, wherein the distance X is chosen to be substantially the minimum spacing allowed by the mask rules. Embodiments directed to software modules for implementing the method and patterning processes employing the method are also disclosed.
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Brady III Wade J.
Franz Warren L.
Rossoshek Helen
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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