Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-21
2008-08-19
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S343000, C257S355000, C257SE29256, C257SE29258
Reexamination Certificate
active
07414287
ABSTRACT:
A semiconductor device includes one or more LDMOS transistors and one of more SCR-LDMOS transistors. Each LDMOS transistor includes a LDMOS well of a first conductivity type, a LDMOS source region of a second conductivity type formed in the LDMOS well, and a LDMOS drain region of a second conductivity type separated from the LDMOS well by a LDMOS drift region of the second conductivity type. Each SCR-LDMOS transistor comprising a SCR-LDMOS well of the first conductivity type, a SCR-LDMOS source region of the second conductivity type formed in the SCR-LDMOS well, a SCR-LDMOS drain region of a second conductivity type, and a anode region of the first conductivity type between the SCR-LDMOS drain region and the SCR-LDMOS drift region. The anode region is separated from the SCR-LDMOS well by a SCR-LDMOS drift region of the second conductivity type.
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Brodsky Jonathan S.
Pendharkar Sameer P.
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Warren Matthew E
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