Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-26
2007-06-26
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21585
Reexamination Certificate
active
10838612
ABSTRACT:
A system and method are provided to facilitate dual damascene interconnect integration with two imprint acts. The method provides for creation of a pair of translucent imprint molds containing the dual damascene pattern to be imprinted. The first imprint mold of the pair contains the via features of the dual damascene pattern and the second imprint mold of the pair contains the trench features. The via feature imprint mold is brought into contact with a first imaging layer deposited upon a first transfer layer which is deposited upon a dielectric layer of a substrate. The trench feature imprint mold is brought into contact with a second imaging layer deposited upon a second transfer layer which is deposited upon the first imaging layer of the substrate. When each imaging layer is exposed to a source of illumination, it cures with a structure matching the features of the corresponding imprint mold. A sequence of etches transfer and combine the via features from the first imaging layer with the trenches from the second imaging layer to create the dual damascene openings within the dielectric layer.
REFERENCES:
patent: 5658418 (1997-08-01), Coronel et al.
patent: 6138712 (2000-10-01), Hirose
patent: 6166819 (2000-12-01), Schnabel
patent: 6476920 (2002-11-01), Scheiner et al.
patent: 6486675 (2002-11-01), Jaiprakash et al.
patent: 6545753 (2003-04-01), Subramanian et al.
patent: 6559942 (2003-05-01), Sui et al.
patent: 6650426 (2003-11-01), Zalicki
Dakshina-Murthy Srikanteswara
Singh Bhanwar
Subramanian Ramkumar
Amin Turocy & Calvin LLP
Sarkar Asok Kumar
LandOfFree
System and method for imprint lithography to facilitate dual... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for imprint lithography to facilitate dual..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for imprint lithography to facilitate dual... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3831327