Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-10-23
2007-10-23
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
11096179
ABSTRACT:
A device is connected in parallel with an MTJ structure of an MRAM bit to shunt photocurrent away from and/or limit voltage across the MTJ structure during a dose rate event. The device may include at least one transistor and/or at least one diode. One device may be used to protect an entire row and/or column of MRAM bits. As a result, the MRAM bits are protected during a dose rate event.
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Hynes Owen J.
Katti Romney
Liu Harry H. L.
Liu Michael S.
Honeywell International , Inc.
McDonnell Boehnen & Hulbert & Berghoff LLP
Nguyen Hien N
Nguyen Tuan T
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