Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-06-26
2007-06-26
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S240000
Reexamination Certificate
active
10855942
ABSTRACT:
A multi-layer PrxCa1-xMnO3(PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.
REFERENCES:
patent: 6927120 (2005-08-01), Hsu et al.
patent: 2005/0040482 (2005-02-01), Suzuki et al.
Charneski Lawrence J.
Evans David R.
Hsu Sheng Teng
Li Tingkai
Zhuang Wei-Wei
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Tsai H. Jey
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