Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-17
2005-05-17
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S004000, C438S637000, C438S706000, C156S345240
Reexamination Certificate
active
06893974
ABSTRACT:
A system and method is provided herein to fabricate openings in a semiconductor topography using feed forward control of etch process parameters. In one embodiment, a method includes measuring one or more dimensional features of a semiconductor topography to obtain pre-etch values. The method also includes determining a statistical result of the pre-etch values and adjusting one or more processing parameters if the statistical result is less than a target value. Subsequently, the method includes etching the semiconductor topography based upon the statistical result to form one or more openings in the semiconductor topography. As such, the system and method described herein fabricates openings using feed forward control of the etch process parameters to compensate for structural variations within semiconductor topographies that may exist between wafer-to-wafer and/or between lot-to-lot. In this manner, the system and method advantageously fabricates openings having profiles and dimensions, which exhibit little to no deviation from a design specification.
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Chowdhury Saurabu Dutta
Sedigh Mehran
Cypress Semiconductor Corp.
Daffer Kevin L.
Daffer McDaniel LLP
Lettang Mollie E.
Vinh Lan
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