Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2008-05-20
2008-05-20
Huff, Mark F. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S396000
Reexamination Certificate
active
10961939
ABSTRACT:
According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a photoresist layer on a surface of a wafer. The wafer includes an array of die that includes a plurality of complete die and at least one partial edge die. The wafer has an edge that has a substantially rounded profile causing undersized patterns in semiconductor devices formed on partial edge die. A first exposure intensity is assigned to a first group of die on the surface of the wafer. The first group of die includes a group of complete die, and the first exposure intensity is assigned based at least in part on the location of the first group of die on the surface of the wafer. A second exposure intensity is assigned to a second group of die on the surface of the wafer. The second group of die includes at least one partial edge die. The second exposure intensity less than the first exposure intensity to compensate for reduced line width due to the wafer edge topography. Energy is directed at the second group of die at the second exposure intensity to avoid over-exposure of the second group of die.
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Stanley Wolf et al., “Silicon Processing for The VLSI ERA,” title page plus pp. 418-420, 437-438, and 444, Sep. 1, 1986.
Atkinson Chris D.
Detweiler Shangting
Guldi Richard L.
Brady III Wade J.
Huff Mark F.
Sullivan Caleen O
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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