Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-22
2007-05-22
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S783000, C257S775000, C257S778000, C257SE21503, C257SE21508, C257SE21509, C257S781000
Reexamination Certificate
active
11134952
ABSTRACT:
According to one embodiment of the invention, a method of die attach includes providing a chip, forming a heat conductive metal layer outwardly from a backside of the chip, and coupling the chip to a substrate. The heat conductive metal layer has a thickness of at least 0.5 mils.
REFERENCES:
patent: 5371404 (1994-12-01), Juskey et al.
patent: 5398160 (1995-03-01), Umeda
patent: 6291880 (2001-09-01), Ogawa et al.
patent: 6670699 (2003-12-01), Mikubo et al.
patent: 2005/0199998 (2005-09-01), Chen et al.
Brady III Wade James
Clark Jasmine
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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