System and method for designing a low leakage monotonic CMOS...

Computer-aided design and analysis of circuits and semiconductor – Integrated circuit design processing – Optimization

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S106000, C716S132000

Reexamination Certificate

active

07996810

ABSTRACT:
A computer system for designing a low leakage monotonic CMOS logic circuit. The system performing the computer implements steps of: (a) specifying a reference PFET having its threshold voltage and its gate dielectric thickness and a reference NFET having its threshold voltage and its gate dielectric thickness; (b) synthesizing a schematic circuit design with standard design elements, the standard design elements including one or more reference PFETS and one or more reference NFETs; (c) analyzing one or more circuits for logic stages having predominantly high input logic states or predominantly low input logic states; (d) selecting one or more logic stages determined to have predominantly high input logic states or predominantly low input logic states; and (e) replacing the standard design elements of the selected logic stages with reduced current leakage elements.

REFERENCES:
patent: 6040707 (2000-03-01), Young et al.
patent: 6249145 (2001-06-01), Tanaka et al.
patent: 6624665 (2003-09-01), Kim et al.
patent: 6635934 (2003-10-01), Hidaka
patent: 6838911 (2005-01-01), Forbes
patent: 6946879 (2005-09-01), Forbes
patent: 7084667 (2006-08-01), Bernstein et al.
patent: 7389478 (2008-06-01), Bernstein et al.
patent: 2002/0008999 (2002-01-01), Hidaka
patent: 2003/0206037 (2003-11-01), Forbes
Sundararajan et al., “Low Power Synthesis of Dual Threshold Voltage CMOS VLSI Circuits,”; IEEE International Symp. On Low Power Electronics and Design, Jun. 1999. pp. 139-144.
Wei et al., “Design and Optimization of Dual-Threshold Circuits for Low-Voltage Low-Power Applications,” IEEE Transactions On Very Large Scale Integration (VLSI) Systems, vol. 7, No. 1, Mar. 1999. pp. 16-24.
Mutoh et al., “1-V Power Supply High-Speed Digital Circuit Technology with Multithreshold-Voltage CMOS,” IEEE Journal of Solid-State Circuits, vol. 30, No. 8, Aug. 1995. pp. 847-854.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

System and method for designing a low leakage monotonic CMOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for designing a low leakage monotonic CMOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for designing a low leakage monotonic CMOS... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2777154

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.