Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1990-06-08
1991-05-28
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429823, 20429825, 437190, 437192, C23C 1434, H01L 21441
Patent
active
050192345
ABSTRACT:
To form a metal layer on a semiconductor wafer, a first portion of a first tungsten/titanium layer is formed by sputtering tungsten/titanium onto the semiconductor wafer in a first evacuated sputter station. A second portion of the first tungsten/titanium layer is then sputtered on in a second evacuated sputter station. Then the tungsten/titanium layer is exposed to air before forming an aluminum layer on top of the tungsten/titanium layer. Finally, a second tungsten/titanium layer is deposited on the aluminum layer. By forming the first tungsten/titanium layer in two steps two sequential sputter stations, the amount of tungsten/titanium deposited onto each sputter station's hardware and shielding is reduced during the processing of each semiconductor wafer, thereby increasing the number of wafers which can be processed by the sputter stations before the tungsten/titanium deposited on the sputter stations' hardware and shielding needs to be removed. The step of exposing the first tungsten/titanium layer to air causes at least partial oxidation of the titanium in the first tungsten/titanium layer and thereby decreases the resistivity of the entire metal sandwich. Exposure of the first tungsten/titanium layer to air also increases the performance of this layer as a diffusion barrier--i.e., as a barrier to diffusion of aluminum into the substrate.
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Nguyen Nam X.
VLSI Technology Inc.
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