Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2005-04-05
2005-04-05
Carrillo, Sharidan (Department: 1746)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S025400, C134S034000, C134S036000, C134S042000
Reexamination Certificate
active
06875285
ABSTRACT:
System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.
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Chuang Ping
Lin Yu-Liang
Lo Henry
Wang Ching-Ya
Zhou Mei-Sheng
Carrillo Sharidan
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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