Etching a substrate: processes – Gas phase etching of substrate – Irradiating – ion implanting – alloying – diffusing – or...
Reexamination Certificate
2011-08-30
2011-08-30
Olsen, Allan (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
Irradiating, ion implanting, alloying, diffusing, or...
C438S014000
Reexamination Certificate
active
08007675
ABSTRACT:
A system and method is disclosed that terminates an etch process of a semiconductor crystal material at a precisely located depth. The semiconductor crystal is made of a first material and has a buried layer of a second material that is stoichiometrically different than the first material. The buried layer is located at a depth in the first material at which it is desired to terminate the etch process. During the etch process an optical emission spectrum of the first material is monitored. The intensity of the spectrum decreases when the etch process reaches the second material of the buried layer. The etch process is terminated when the decrease in spectrum intensity is detected.
REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 5024723 (1991-06-01), Goesele et al.
patent: 5310451 (1994-05-01), Tejwani et al.
patent: 5414276 (1995-05-01), McCarthy
patent: 5462883 (1995-10-01), Dennard et al.
patent: 5476813 (1995-12-01), Naruse
patent: 5882987 (1999-03-01), Srikrishnan
patent: 6110794 (2000-08-01), Liu
patent: 6455398 (2002-09-01), Fonstad et al.
patent: 6524935 (2003-02-01), Canaperi et al.
patent: 6682981 (2004-01-01), Leedy
patent: 6690043 (2004-02-01), Usuda et al.
patent: 6703688 (2004-03-01), Fitzergald
patent: 6890835 (2005-05-01), Chu et al.
patent: 7001826 (2006-02-01), Akatsu et al.
patent: 7078353 (2006-07-01), Daval et al.
patent: 2001/0003269 (2001-06-01), Wu et al.
patent: 2002/0168864 (2002-11-01), Cheng et al.
patent: 2003/0003739 (2003-01-01), Butschke et al.
patent: 2003/0160300 (2003-08-01), Takenaka et al.
patent: 2003/0183937 (2003-10-01), Gates et al.
patent: 2004/0000268 (2004-01-01), Wu et al.
patent: 2004/0009649 (2004-01-01), Kub et al.
patent: 2004/0053477 (2004-03-01), Ghyselen et al.
patent: 2004/0175955 (2004-09-01), Haselden et al.
patent: 2004/0259324 (2004-12-01), Brask et al.
patent: 2006/0240583 (2006-10-01), Baney et al.
Tillack et al., Monitoring of deposiiton and dry etching of Si/SiGe multiple stacks, J. Vac. Sci. Technol. B 14(1), pp. 102-105, Jan./Feb. 1996.
Labonte Andre P.
Printy Craig Richard
National Semiconductor Corporation
Olsen Allan
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