Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S083000, C257S084000, C257S187000, C257S290000, C257S291000, C257S461000, C257S462000, C257S464000, C257SE33045, C257SE33076, C257SE33077
Reexamination Certificate
active
07868367
ABSTRACT:
A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.
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Office Action of Chinese Application No. 200710094550.4, dated Oct. 9, 2009, 7 pages total (English translation not included).
Hong Zhu
Yang Jim
Semiconductor Manufacturing International (Shanghai) Corporation
Soward Ida M
Townsend and Townsend / and Crew LLP
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