Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1992-10-13
1995-01-10
Wieder, Kenneth A.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
437 8, G01R 104
Patent
active
053811038
ABSTRACT:
A method of testing a semiconductor device, having the steps of pulsing the semiconductor device with a predetermined level of current for a duration of time so as to cause inadequate parts to degrade and to cause adequate parts to stabilize, and measuring predetermined electrical or optical performance characteristics for the semiconductor device after the current pulse. A system for testing a semiconductor device on a wafer is also provided having a contact probe for applying current pulses to the semiconductor device on the wafer, measuring means electrically connected to the probe for measuring predetermined electrical or optical performance characteristics of the semiconductor device on the wafer, and optical detection means electrically connected to the measuring means for detecting radiation emitted from the semiconductor device on the wafer.
REFERENCES:
patent: 3742356 (1973-06-01), Brock
patent: 3870953 (1975-03-01), Boatman et al.
patent: 3978405 (1976-08-01), Petree
patent: 4215309 (1980-07-01), Frey
patent: 4301403 (1981-11-01), Hawkes et al.
patent: 4307342 (1981-12-01), Peterson
patent: 4489477 (1984-12-01), Chik et al.
patent: 4578641 (1986-03-01), Tiedje
patent: 4611116 (1986-09-01), Batt
patent: 4775640 (1988-10-01), Chan
patent: 4797609 (1989-01-01), Yang
patent: 5047711 (1991-09-01), Smith et al.
patent: 5065007 (1991-11-01), Tanaka
patent: 5303905 (1991-07-01), Figal
Light Emitting Diodes an Introduction, by Klaus Gillessen and Werner Schairer, Prentice/Hall International 1991, pp. 97-99.
Asbury Douglas A.
Carter, Jr. Calvin H.
Edmond John A.
Waltz Douglas G.
Bowser Barry C.
Cree Research Inc.
Wieder Kenneth A.
LandOfFree
System and method for accelerated degradation testing of semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for accelerated degradation testing of semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for accelerated degradation testing of semicon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-853642