Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-10-09
2007-10-09
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185330, C365S185230, C365S185050, C365S230030
Reexamination Certificate
active
11514746
ABSTRACT:
A system and method for performing memory operations in a multi-plane flash memory. Commands and addresses are sequentially provided to the memory for memory operations in memory planes. The memory operations are sequentially initiated and the memory operation for at least one of the memory planes is initiated during the memory operation for another memory plane. In one embodiment, each of a plurality of programming circuits is associated with a respective memory plane and is operable to program data to the respective memory plane in response to programming signals and when it is enabled. Control logic coupled to the plurality of programming circuits generates programming signals in response to the memory receiving program commands and further generates programming enable signals to individually enable each of the programming circuits to respond to the programming signals and stagger programming of data to each of the memory planes.
REFERENCES:
patent: 5337275 (1994-08-01), Garner
patent: 5341330 (1994-08-01), Wells et al.
patent: 5519847 (1996-05-01), Fandrich et al.
patent: 5577194 (1996-11-01), Wells et al.
patent: 5914902 (1999-06-01), Lawrence et al.
patent: 6081878 (2000-06-01), Estakhri et al.
patent: 6101150 (2000-08-01), Roohparvar
patent: 6208556 (2001-03-01), Akaogi et al.
patent: 6304510 (2001-10-01), Nobunaga et al.
patent: 6538926 (2003-03-01), Kato et al.
patent: 6580659 (2003-06-01), Roohparvar
patent: 7032065 (2006-04-01), Gonzalez et al.
patent: 2005/0141313 (2005-06-01), Gorobets et al.
patent: 2006/0218359 (2006-09-01), Sanders et al.
Hynix, “16Gb NAND Flash HY27UH08AG(5/D) M Series 16Gbit, (2G×8bit) NAND Flash”, Sep. 2006. pp. 1-54.
Lee, J. et al., “High-Performance 1-Gb NAND Flash Memory with 0.12-μm Technology”, IEEE Journal of Sold-State Circuits, vol. 37, No. 11, Nov. 2002. pp. 1502-1509.
Micron Technology, Inc. “NAND Flash Memory MT29F4G08AAA, MT29F8G08DAA, MT29F16G08FAA”, 2006. pp. 1-79.
Samsung Electronics Co, LTD., “Flash Memory K9XXG08UXA”, Nov. 2005. pp. 1-50.
Dorsey & Whitney LLP
Micro)n Technology, Inc.
Nguyen Viet Q.
LandOfFree
System and memory for sequential multi-plane page memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and memory for sequential multi-plane page memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and memory for sequential multi-plane page memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3901397