Magnetoresistance effect element and magnetic head

Details Magnetoresistance effect element and magnetic head Magnetoresistance effect element and magnetic head

2007-10-09

2007-10-09

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

11657504

ABSTRACT:
A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

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