System and apparatus for in situ monitoring and control of annea

Details System and apparatus for in situ monitoring and control of annea System and apparatus for in situ monitoring and control of annea

1997-06-16

2000-12-26

Walberg, Teresa

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

438 14, 118725, 324751, 427508, F27B 514

Patent

active

061663549

ABSTRACT:
An optical monitoring of electrical characteristics of devices in a semiconductor is performed during an anneal step to detect the time annealing is complete and activation occurs. A surface photovoltage measurement is made during annealing to monitor the charge state on the surface of a substrate wafer to determine when the substrate is fully annealed. The surface photovoltage measurement is monitored, the time of annealing is detected, and a selected over-anneal is controlled. The surface photovoltage (SPV) measurement is performed to determine a point at which a dopant or impurity such as boron or phosphorus is annealed in a silicon lattice. In some embodiments, the point of detection is used as a feedback signal in an RTA annealing system to adjust a bank of annealing lamps for annealing and activation uniformity control. The point of detection is also used to terminate the annealing process to minimize D.sub.t.

REFERENCES:
patent: 5581194 (1996-12-01), Lowell
patent: 5714392 (1998-02-01), Dawson et al.
Silicon Processing for the VLSI Era--vol. 1: Process Technology, by S. Wolf, published by Lattice Press, Sunset Beach, CA, 1986, pp. 182-327.
Silicon Processing for the VLSI Era--vol. 2: Process Integration, by S. Wolf, published by Lattice Press, Sunset Beach, CA, 1990, pp. 124-131.

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