Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1998-08-28
1999-06-01
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 40, 257 94, 257 96, H01L 3300, H01L 3524, H01L 5100
Patent
active
059090383
ABSTRACT:
There is disclosed a syntheitc method of mixing a soluble poly(1,4-phenylenvinylene)(PPV) derivative in which two silyl groups are substituted, and an electroluminescent device using the same. In the according to the present invention, the final polymer is easily dissolved in common organic solvents and shows a measured absolute PL quantum efficiency of 60% much higher than that of the conventional PPV having 25%, thus making it possible to be applied as material of an electroluminnescent device. Also, it provides an outstanding advantage that it can be applied to a flexible light-emitting device.
REFERENCES:
patent: 5011944 (1991-04-01), Kvita et al.
patent: 5247190 (1993-09-01), Friend et al.
Do-Hoon Hwang et al., Green light-emitting diodes from poly(2-dimethyloctylsilyl-1,4-phenylenevinylene), Chem. Commun., 1996, pp. 2241-2242, 1996.
J. H. Burroughes et al., "Light-emitting diodes based on conjugated polymers", Letters to Nature, pp. 539-541.
Do-Hoon Hwang et al., Green light-emitting diodes from poly(2-dimethyloctylsilyl-1,4-phenylenevinylene), Chem. Commun., 1996, pp. 2241-2242.
Choi Kang Hoon
Do Lee Mi
Hwang Do Hoon
Jung Sang Don
Lee Hyang Mok
Baumeister Bradley William
Electronics and Telecommunications Research Institute
Jackson, Jr. Jerome
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