Synthetic antiferromagnet structures for use in MTJs in MRAM...

Details Synthetic antiferromagnet structures for use in MTJs in MRAM... Synthetic antiferromagnet structures for use in MTJs in MRAM...

2005-09-20

2005-09-20

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

06946697

ABSTRACT:
A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.

REFERENCES:
patent: 6197439 (2001-03-01), Parkin
patent: 6469926 (2002-10-01), Chen
patent: 6518588 (2003-02-01), Parkin

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