Synthesizing semiconductor process flow models

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S030000, C716S030000, C700S029000, C700S121000

Reexamination Certificate

active

11153575

ABSTRACT:
Systems and methods of modeling a best-guess semiconductor process flow for fabricating a desired semiconductor device are provided. The best-guess process flow is modeled using an inverse modeling technique. This technique reverse engineers a desired semiconductor device to synthesize a model of a fabrication process that is likely to produce the desired semiconductor device. First, a desired device having one or more desired characteristics is modeled. Then, various process and material parameters, constraints, and actual measured data are used to synthesize one or more unique software models that represent a process flow likely to fabricate the desired device. If more than one process flow is modeled, various parameters are modified iteratively until a unique process flow model is synthesized.

REFERENCES:
patent: 5661669 (1997-08-01), Mozumder et al.
patent: 6069485 (2000-05-01), Long et al.
patent: 6368883 (2002-04-01), Bode et al.
patent: 6526547 (2003-02-01), Breiner et al.
patent: 6535774 (2003-03-01), Bode et al.
patent: 6560503 (2003-05-01), Toprac et al.
patent: 6622059 (2003-09-01), Toprac et al.
Shimon Coean and Michael Wang-Ho Yu, The Inverse Problem of the Direct Current Conductivity Profile of a Layered Earth, Geophysics, vol. 46, No. 12, pp. 1702-1713, Dec. 1981.
R.H.T. Bates et al., Overview of Computerized Tomography with Emphasis on Future Developments, Proceedings of the IEEE, vol. 71, No. 3, pp. 356-372, Mar. 1983.
Kyriakos Doganis et al., General Optimization and Extraction of IC Device Model Parameters, IEEE Transactions on Electron Devices, vol. ED-30, No. 9, pp. 1219-1228, Sep. 1983.
A.G. Tijhuis, Electronmagnetic Inverse Profiling: Theory and Numerical Implementation, VNU Science Press, Utrecht, pp.xiv and 311-386, 1987.
Zachary K. Lee, Two-Dimensional Doping Profile Characterization of MOSFET's by Inerse Modeling Using I-V Characteristics in the Subthreshold Region, IEEE Transactions or Electron Devices, vol. 46, No. 8, pp. 1640-1649, Aug. 1999.
Chandra V. Mouli, Models and methods: Effective use of Technology-Computed Aided Design in the Industry,American Vacuum Society, J.Vac.Sci Technol. B 18(1), pp. 354-360 Jan./Feb. 2000.
W. R. Richards et al., Extraction of Two-Dimensional Metal—Oxide—Semiconductor Field Effect Transistor Structural Information from Electrical Characteristics, American Vacuum Society, J.Vac. Sci. Technol. B18(1), pp. 533-539, Jan/Feb. 2000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Synthesizing semiconductor process flow models does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Synthesizing semiconductor process flow models, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Synthesizing semiconductor process flow models will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3918950

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.