Synthesis of aluminum nitride

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156614, 156DIG99, 423412, 423509, C01B 2106

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active

041727541

ABSTRACT:
Solid aluminum nitride, deposited for example, in epitaxial layers, is prepared by reacting aluminum and selenium to form aluminum monoselenide, and transporting the aluminum monoselenide in an inert carrier gas to a heated deposition zone where it is contacted with and reacts with nitrogen to give the aluminum nitride, the carrier gas flushing away elemental selenium also produced in the deposition zone.

REFERENCES:
patent: 3598526 (1971-08-01), Huml et al.
patent: 3607046 (1971-09-01), Little et al.
patent: 3922475 (1975-11-01), Manasevit
patent: 3933573 (1976-01-01), Dugger

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