Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-25
2009-08-18
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C327S409000, C388S800000
Reexamination Certificate
active
07576396
ABSTRACT:
In accordance with the principles of the invention, an integrated circuit comprises a substrate having a first FET formed on the substrate. The first FET has a first terminal coupleable to a load, a second terminal and a control terminal. The second terminal is connected to the substrate. The substrate comprises a parasitic body diode coupled between the first terminal and the substrate. The body diode is disposed such that it becomes conductive when a reverse voltage across the FET first terminal and the substrate is at least a first diode forward voltage. A voltage detector is formed on the substrate. The voltage detector has a first input coupled to the FET first terminal, a second input coupled to the substrate, and an output coupled to the FET control terminal. The voltage detector is responsive to a reverse voltage level at the FET first terminal that is less than the first diode forward voltage to turn the FET on for the duration of a reverse voltage having at least said reverse voltage level. The parasitic body diode is thereby prevented from injecting current into the substrate.
REFERENCES:
patent: 4256979 (1981-03-01), Hendrickson et al.
Alberkrack Jade H.
Brannen Robert Alan
Bushey Thomas Peter
Cave David L.
Dolpan Audio, LLC
Knobbe Martens Olson & Bear LLP
Wojciechowicz Edward
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