Static information storage and retrieval – Read/write circuit – Simultaneous operations
Patent
1992-10-22
1994-05-03
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Simultaneous operations
36518905, 365203, 365233, 36518907, G11C 700
Patent
active
053093950
ABSTRACT:
Maximum operating speed is achieved in an array of memory cells by performing both read and write operations within a single memory cycle. As outgoing data are read from the memory cells, incoming data are stored immediately in those cells. Once data are read from the memory cells, a latch signal is generated to trigger latching of the read data for output to a data bus. The same latch signal that is used to latch the read data initiates the writing of new data to the memory cells. Use of a single latch signal in this manner ensures that new data are not written to the memory cells until the existing data has been read from those cells.
REFERENCES:
patent: 4829471 (1989-05-01), Banerjee et al.
patent: 4849937 (1989-07-01), Yoshimoto
Chu, S. T. et al., "A 25-ns Low-Power Full-CMOS 1-Mbit (128K.times.8) SRAM," IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1078-1084.
deWerdt, R. et al., "A 1M SRAM With Full CMOS Cells Fabricated In A 0.7$ mu $M Technology," IEDM, 1987, pp. 532-534.
Nakagome, Y. et al., "A 1.5V Circuit Technology for 64 Mb DRAMs," 1990 Symposium on VLSI Circuits, Honolulu, Jun. 7-9, 1990, pp. 17-18.
Blalock, T. N. et al., "An Experimental 2T Cell RAM With 7 NS Access Time At Low Temperatures," 1990 Symposium on VLSI Circuits, Honolulu, Jun. 7-9, 1990, pp. 13-14.
Sasaki, K. et al., "A 9-ns 1-Mbit CMOS SRAM," IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1219-1225.
Seevinck, E., "A Current Sense-Amplifier For Fast CHMO SRAMs," 1990 Symposium on VLSI Circuits, Honolulu, Jun. 7-9, 1990, pp. 43-44.
Seevinck, E. et al., "Current-Mode Techniques for High-Speed VLSI Circuits With Application To Current Sense Amplifier for CMOS SRAM's," IEEE Journal of Solid-State Circuits, vol. 26, No. 4, Apr. 1991, pp. 525-536.
Dickinson Alexander G.
Hatamian Mehdi
Rao Sailesh K.
AT&T Bell Laboratories
deBlasi Gerard A.
LaRoche Eugene R.
Yoo Do Hyum
LandOfFree
Synchronous static random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Synchronous static random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Synchronous static random access memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2120456