Synchronous semiconductor memory devices and data strobe...

Static information storage and retrieval – Read/write circuit – Signals

Reexamination Certificate

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C365S100000, C365S230080

Reexamination Certificate

active

07020031

ABSTRACT:
A synchronous semiconductor memory device includes a data input buffer and a data strobe input buffer. The data strobe input buffer includes an input buffer circuit and a detection circuit. The input buffer circuit is configured to be enabled based on an active signal, and to compare a data strobe signal with a first reference voltage to generate an internal data strobe signal. The detection circuit is configured to be enabled based on the active signal, and to compare the data strobe signal with a second reference voltage to generate a detection signal for enabling the data input buffer.

REFERENCES:
patent: 6529422 (2003-03-01), Mazumder et al.
patent: 6819602 (2004-11-01), Seo et al.
patent: 000027382 (2000-05-01), None
patent: 010004958 (2001-01-01), None
patent: 2001-195884 (2001-07-01), None

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