Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-10-10
2006-10-10
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230090, C365S236000
Reexamination Certificate
active
07120078
ABSTRACT:
In an FCRAM having a late write function, when a first command signal indicates “write active”, whether a write operation or an auto-refresh operation is to be performed is determined on the basis of a second command signal. For example, when the second command signal indicates “write”, a write operation for a memory cell is performed by a late write scheme. When the second command signal indicates “auto-refresh”, an auto-refresh operation is performed. In the last write cycle of a write operation immediately preceding this auto-refresh operation, addresses for selecting a memory cell as an object of auto-refresh are predetermined. After data write to a memory cell is completed in the last write cycle, row precharge for auto-refresh is performed. After that, an auto-refresh operation (i.e., a data read operation and a data restore operation) is performed for the selected memory cell.
REFERENCES:
patent: 3748651 (1973-07-01), Mesnik
patent: 4747082 (1988-05-01), Minato et al.
patent: 5446696 (1995-08-01), Ware et al.
patent: 6005823 (1999-12-01), Martin et al.
patent: 6088291 (2000-07-01), Fujioka et al.
patent: 6144617 (2000-11-01), Takai
patent: 6222785 (2001-04-01), Leung
patent: 6317852 (2001-11-01), Lau et al.
patent: 6426915 (2002-07-01), Ohshima et al.
patent: WO 98-56004 (1998-12-01), None
Yasuharu Sato et al., “Fast Cycle RAM (FCRAM); a 20-ns Random Row Access, Pipe-Lined Operating DRAM”, (VLSI Symp. 1998).
Kawaguchi Kazuaki
Ohshima Shigeo
Ho Hoai V.
Hogan & Hartson LLP
LandOfFree
Synchronous semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Synchronous semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Synchronous semiconductor memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3689344