Synchronous page-mode phase-change memory with ECC and RAM...

Details Synchronous page-mode phase-change memory with ECC and RAM... Synchronous page-mode phase-change memory with ECC and RAM...

2007-06-27

2009-10-20

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Addressing

Byte or page addressing

C365S163000, C365S230030

Reexamination Certificate

active

07606111

ABSTRACT:
Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data and is relatively long. A page-mode caching PCM device has a lookup table (LUT) that caches write data that is later written to an array of PCM banks. Host data is latched into a line FIFO and written into the LUT, reducing write delays to the relatively slow PCM. Host read data can be supplied by the LUT or fetched from the PCM banks. A multi-line page buffer between the PCM banks and LUT allows for larger block transfers using the LUT. Error-correction code (ECC) checking and generation is performed for data in the LUT, hiding ECC delays for data writes into the PCM banks.

REFERENCES:
patent: 5751637 (1998-05-01), Chen et al.
patent: 6286075 (2001-09-01), Stracovsky et al.
patent: 6487113 (2002-11-01), Park et al.
patent: 6496415 (2002-12-01), Tsao
patent: 6504791 (2003-01-01), Naura et al.
patent: 6912598 (2005-06-01), Bedarida et al.
patent: 7050328 (2006-05-01), Khouri et al.
patent: 7075841 (2006-07-01), Resta et al.
patent: 7099179 (2006-08-01), Rinerson et al.
patent: 2005/0041498 (2005-02-01), Resta et al.
patent: 2005/0158950 (2005-07-01), Scheuerlein et al.
patent: 2006/0087893 (2006-04-01), Nishihara et al.
patent: 2007/0121376 (2007-05-01), Toda

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