Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-11-28
2009-06-02
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S167000, C438S169000, C438S191000, C438S738000, C438S740000, C257S191000, C257SE21403, C257SE21407
Reexamination Certificate
active
07541232
ABSTRACT:
A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors includes defining gate recesses in the structure. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.
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Kao Ming-Yih
Robinson Kevin L.
Witkowski Larry
Ahmadi Mohsen
Howard IP Law Group, P.C.
Lindsay, Jr. Walter L
Lockheed Martin Corporation
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