Synchronous DRAM performing refresh operation a plurality of tim

Static information storage and retrieval – Read/write circuit – Data refresh

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36523006, 365233, G11C 700, G11C 800

Patent

active

055661190

ABSTRACT:
A semiconductor memory device is disclosed as a synchronous DRAM. This DRAM includes a refresh control circuit 4, 5 responding to a refresh request RF supplied thereto and performing a refresh operation at least twice. In the first refresh operation, one of word lines WL is selected and memory cells 13 associated with the selected word line are refreshed, and thereafter a different one of the word lines WL is selected and memory cells 13 associated therewith are refreshed in the next refresh operation.

REFERENCES:
patent: 5446696 (1995-08-01), Ware et al.
patent: 5511033 (1996-04-01), Jung

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