Symmetrical polarization enhancement in a ferroelectric memory c

Details Symmetrical polarization enhancement in a ferroelectric memory c Symmetrical polarization enhancement in a ferroelectric memory c

1992-10-02

1994-05-03

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365218, G11C 1122, G11C 1606

Patent

active

053093917

ABSTRACT:
A two-transistor, single capacitor ferroelectric memory cell in which a stepped voltage is applied to the drive line for writing polarization states into the capacitor. The isolation transistors are driven into cut off during the intermediate voltage level of the drive line, thereby isolating the ferroelectric capacitor plates with a balanced voltage to enhance full polarization of the ferroelectric domains, irrespective of the polarization state.

REFERENCES:
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 4888733 (1989-12-01), Mobley
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 5038323 (1991-08-01), Schwee
patent: 5148395 (1992-09-01), Sowards
patent: 5175706 (1992-12-01), Edme
patent: 5198994 (1993-03-01), Natori
Ferroelectric Memories, Science, vol. 246, pp. 1400-1405, Dec., 1989, by James F. Scott, et al.

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