Symmetric double water plasma etching system

Details Symmetric double water plasma etching system Symmetric double water plasma etching system

1991-11-04

1994-07-19

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 20419232, H01L 2100

Patent

active

053306155

ABSTRACT:
The present invention teaches a method to produce and construct a symmetric double wafer parallel plate RF plasma etching system. In such a symmetric system, maximum voltage difference between the electrodes and minimum voltage differences between the individual electrodes and reactor vessel are easily achieved. Two wafers can be etched in a single discharge and efficiency may be increased considerably when compared with single wafer systems.

REFERENCES:
patent: 4622094 (1986-11-01), Otsubo
patent: 4626312 (1986-12-01), Tracy
patent: 4863549 (1989-09-01), Grunwald
patent: 4871421 (1989-10-01), Ogle et al.
patent: 5057185 (1991-10-01), Thomas, III et al.
patent: 5061359 (1991-10-01), Babu et al.
patent: 5147493 (1992-09-01), Nishimura et al.

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