SyAF structure to fabricate Mbit MTJ MRAM

Details SyAF structure to fabricate Mbit MTJ MRAM SyAF structure to fabricate Mbit MTJ MRAM

2007-03-08

2010-02-16

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S295000, C257S421000, C257S422000, C257S425000

Reexamination Certificate

active

07663131

ABSTRACT:
A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20B20layer and an upper crystalline Co75Fe25layer to promote a smoother and more uniform AlOx tunnel barrier. A “stronger oxidation” state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to <10 ppm by using the preferred MTJ configuration.

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