Switching element, programmable logic integrated circuit and...

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...

Reexamination Certificate

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C257SE45003

Reexamination Certificate

active

07989924

ABSTRACT:
A switching element with a switching voltage set higher than conventional, which includes an ion conduction layer including tantalum oxide, a first electrode provided in contact with the ion conduction layer, and a second electrode provided in contact with the ion conduction layer and capable of supplying the ion conduction layer with metal ions.

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patent: 7307270 (2007-12-01), Aratani et al.
patent: 2002/0009877 (2002-01-01), Wang et al.
patent: 2002/0020836 (2002-02-01), Kikuchi et al.
patent: 2002/0168820 (2002-11-01), Kozicki et al.
patent: 2005/0127524 (2005-06-01), Sakamoto et al.
patent: WO 03/094227 (2003-11-01), None
patent: WO 03094227 (2003-11-01), None

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