Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-08-22
2011-11-15
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S316000, C257S347000, C257S537000, C257SE29300
Reexamination Certificate
active
08058648
ABSTRACT:
There is provided a switching device that electrically connects or disconnects a first terminal and a second terminal to/from each other. The switching device includes a semiconductor layer, a drain electrode that is formed in the semiconductor layer, where the drain electrode is connected to the first terminal, a source electrode that is formed in the semiconductor layer, where the source electrode is connected to the second terminal, a gate insulator that is formed on the semiconductor layer between the drain electrode and the source electrode, a floating gate that is formed on the gate insulator, where the floating gate retains a charge therein, and a tunnel gate that is formed on the floating gate, the tunnel gate supplying a tunnel current determined by a driving voltage applied thereto to charge or discharge the floating gate.
REFERENCES:
patent: 2002/0113268 (2002-08-01), Koyama et al.
patent: 2004/0183159 (2004-09-01), Tamaki et al.
patent: 63-184367 (1988-07-01), None
patent: 3-208409 (1991-09-01), None
patent: 09-237307 (1997-09-01), None
patent: 9-237307 (1997-09-01), None
patent: 10294488 (1998-11-01), None
patent: 2004-94922 (2004-03-01), None
patent: 2004185896 (2004-07-01), None
International Search Report PCT/JP2007/066267 mailed Nov. 20, 2007 (English & Japanese (4 pages).
Espacenet, Patent Abstract for Japanese Publication No. 2004-185896 Published Jul. 2, 2004 (1 page).
Espacenet, Patent Abstract for Japanese Publication No. 10294488 Published Nov. 4, 1998 (1 page).
Advantest Corporation
Osha & Liang LLP
Tran Tan N
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