Switchable memory diode—a new memory device

Details Switchable memory diode—a new memory device Switchable memory diode—a new memory device

2011-07-19

2011-07-19

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S082000, C438S099000, C257S040000, C257S642000, C257SE21024, C257SE51023

Reexamination Certificate

active

07981773

ABSTRACT:
Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.

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