Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-07-10
2007-07-10
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S148000
Reexamination Certificate
active
11329465
ABSTRACT:
A memory element, logic element or sensor element is provided, which element comprises a switchable first magnetic component exhibiting a ferromagnetic or ferrimagnetic behaviour and comprising at least two magnetic domains with different magnetization directions and a domain wall between the magnetic domains. The element has electrodes operable to induce an electric current which at least partially flows through the domain wall with a current density high enough to cause the domain wall to reversibly propagate within the magnetic component. The first magnetic component may belong to a layered system further including a second magnetic component with a fixed magnetization and a non-magnetic spacer layer arranged between the first and second magnetic component. In such a layered system, the electrical resistance may depend on the relative orientation of the magnetization directions of the first and second magnetic component, due to the GMR or TMR effect.
REFERENCES:
patent: 6724652 (2004-04-01), Deak
patent: 7102477 (2006-09-01), Bland et al.
Allenspach Rolf
Jubert Pierre-Olivier
Klaeui Mathias
Herzberg Louis P.
Le Vu A.
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