Switch mode power amplifier using mis-HEMT with field plate...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S401000, C257S622000, C257S630000, C330S257000

Reexamination Certificate

active

07875914

ABSTRACT:
Disclosed are a switch mode power amplifier and a field effect transistor especially suitable for use in a switch mode power amplifier. The transistor is preferably a compound high electron mobility transistor (HEMT) having a source terminal and a drain terminal with a gate terminal therebetween and positioned on a dielectric material. A field plate extends from the gate terminal over at least two layers of dielectric material towards the drain. The dielectric layers preferably comprise silicon oxide and silicon nitride. A third layer of silicon oxide can be provided with the layer of silicon nitride being positioned between layers of silicon oxide. Etch selectivity is utilized in etching recesses for the gate terminal.

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