Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-12-17
2010-06-22
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S189090, C365S226000, C365S227000, C365S228000, C365S229000
Reexamination Certificate
active
07742325
ABSTRACT:
A method for operating an SRAM cell comprises, during a read operation, forward biasing an N-well of a first and second pull-up transistor, and forward biasing a P-well of a first and second pull-down transistor and a first and second access transistor. The method further comprises, during a write operation, zero or reverse biasing an N-well of a first and second pull-up transistor, and forward biasing a P-well of a first and second pull-down transistor and a first and second access transistor. The method further comprises, during an idle state, zero biasing an N-well of a first and second pull-up transistor and zero biasing a P-well of a first and second pull-down transistor and a first and second access transistor. In addition, one or more rows or columns of memory cells may receive a bias voltage.
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Baker & Botts L.L.P.
Phan Trong
SuVolta, Inc.
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