Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29255, C257SE29299, C977S762000, C977S814000, C977S938000
Reexamination Certificate
active
07977755
ABSTRACT:
The present invention discloses a suspended nanochannel transistor structure and a method for fabricating the same. The transistor structure of the present invention comprises a substrate; a side gate formed on the substrate; a dielectric layer covering the substrate and the side gate; a suspended nanochannel formed beside the lateral of the side gate with an air gap existing between the suspended nanochannel and the dielectric layer; a source and a drain formed over the dielectric layer and respectively arranged at two ends of the suspended nanochannel. The electrostatic force of the side gate attracts or repels the suspended nanochannel and thus fast varies the equivalent thickness of the side-gate dielectric layer. Thereby, the on/off state of the element is rapidly switched, or the initial voltage of the channel is altered.
REFERENCES:
patent: 7727830 (2010-06-01), Jin et al.
patent: 2006/0091481 (2006-05-01), Li et al.
patent: 2008/0246021 (2008-10-01), Suk et al.
patent: I246541 (2006-01-01), None
N. Abele, A. Villaret, A. Gangadharaiah, C. Gabioud, P. Ancey, and A.M. Ionescu; 1T MEMS Memory Based on Suspended Gate MOSFET, IEDM, 2006.
X.L. Feng, Rongrui He, Peidong Yang, and M.L. Roukes; Very High Frequency Silicon Nanowire Electromechanical Resonators, Nano Letters, 2007, vol. 7, No. 7, 1953-1959.
Hsu Hsing-Hui
Li Guan-Jang
Lin Horng-Chih
Su Chun-Jung
Kuo W. Wendy
National Chiao Tung University
Rosenberg , Klein & Lee
Sandvik Benjamin P
LandOfFree
Suspended nanochannel transistor structure and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Suspended nanochannel transistor structure and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Suspended nanochannel transistor structure and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2637610