Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2011-05-17
2011-05-17
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S417000, C438S053000
Reexamination Certificate
active
07944008
ABSTRACT:
An accurate and low cost macro pressure sensor is described. The pressure sensor includes an array of capacitive sensing elements formed at the intersections of sets of conductors. A lower set of conductors is supported by a substrate and an upper set of conductors is supported on a flexible polymer membrane. Capacitive sensing elements are formed where a conductor in the upper set overlaps a spacer in the lower set. Separators hold the membrane away from the substrate with a separation that, because of deflection of the membrane, varies in relation to the pressure applied to the membrane. As a result, the separation of conductors, and therefore capacitance, in each cell varies in response to the applied pressure. By attaching the membrane to the separators and optionally using slits in the membrane between capacitive sensing elements, measurements made in each capacitive sensing element can be mechanically decoupled.
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International Search Report and Written Opinion mailed Nov. 28, 2008 for International Application No. PCT/US2008/005287 (7 pages).
Cao Chi
Parks Thomas R.
Henry Caleb
Pham Thanh V
Sierra Scientific Instruments, LLC
Wolf Greenfield & Sacks P.C.
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