Susceptor with epitaxial growth control devices and...

Details Susceptor with epitaxial growth control devices and... Susceptor with epitaxial growth control devices and...

2006-12-26

2006-12-26

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

Work support

C118S715000, C118S725000, C156S345510

Reexamination Certificate

active

07153368

ABSTRACT:
A susceptor (1) for epitaxial growth reactors comprises a body (2) having a lower base (3), an upper top (4) and some substantially flat side faces (5); the side faces are adapted to receive, in predetermined areas (6), substrates on which the epitaxial growth develops; body (2) is provided with edge side regions (7) defined by couples of adjacent side faces (5); along edge side regions (7) in the upper part of body (2) there are provided first ribs (8) adapted to control the flow of reaction gases along side faces (5); along edge side regions (7) in the lower part of body (2) there are provided second ribs (9) adapted to control the flow of reaction gases along side faces (5).

REFERENCES:
patent: 4579080 (1986-04-01), Martin et al.
patent: 6071351 (2000-06-01), Venkatasubramanian
patent: 0 415 191 (1991-03-01), None
patent: 1 215 444 (1988-11-01), None
patent: 1 261 886 (1996-06-01), None
patent: 02 212393 (1990-08-01), None
patent: WO 00 58533 (2000-10-01), None

Affiliated with

Also associated with

Rating

Susceptor with epitaxial growth control devices and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Susceptor with epitaxial growth control devices and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Susceptor with epitaxial growth control devices and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3660389