Susceptor for semiconductor wafer processing

Details Susceptor for semiconductor wafer processing Susceptor for semiconductor wafer processing

1995-12-14

1996-12-17

Kunemund, Robert

Coating apparatus

Gas or vapor deposition

Work support

118500, C23C 1600

Patent

active

055849369

ABSTRACT:
A susceptor for rapid thermal processing for epitaxial deposition upon semiconductor wafers. The susceptor includes an outer supporting ring upon which the wafer rests. This outer ring is preferably formed of a monolithic mass of silicon carbide, and most preferably high purity .beta.-phase (face-centered cubic) silicon carbide. The wafer is supported upon a small wafer shoulder on the ring. To prevent deposition upon the rear or bottom face of the wafer, a blocker shoulder is also provided in the ring, below the wafer shoulder, and a blocker is placed upon this shoulder. The blocker is preferably formed of quartz, and simply rests upon the shoulder. In this manner the ring and blocker may expand at different rates upon the rapid temperature changes, and the blocker or ring may be replaced.

REFERENCES:
patent: 3436255 (1969-04-01), Harris
patent: 4094269 (1978-06-01), Malinovski
patent: 5042423 (1991-08-01), Wilkinson
patent: 5169453 (1992-12-01), Takagi
patent: 5169684 (1992-12-01), Takagi
patent: 5444217 (1995-08-01), Moore
patent: 5465184 (1995-11-01), Pickering et al.

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