Susceptor for an epitaxial growth factor

Coating apparatus – Gas or vapor deposition – Work support

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118500, C23C 1600

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active

057887772

ABSTRACT:
A susceptor assembly for use in an epitaxial growth reactor for growing silicon carbide epitaxial layers. The susceptor assembly is rotatable about a central axis and includes a plurality of cavities each for receiving a wafer holder. A plurality of gas passageways leading to respective cavities, carries gas for levitating and rotating the wafer holders in their respective cavities. All of the gas passageways in the susceptor assembly are non-radially oriented.

REFERENCES:
patent: 4860687 (1989-08-01), Frijlink
patent: 4961399 (1990-10-01), Frijlink
patent: 5027749 (1991-07-01), Frijlink
Frijlink, Journal of Crystal Growth 107(1991) 166-174.

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