Susceptor for a device for epitaxially growing objects and such

Details Susceptor for a device for epitaxially growing objects and such Susceptor for a device for epitaxially growing objects and such

1996-03-15

1997-10-07

Bueker, Richard

Coating apparatus

Work holders, or handling devices

118715, 118728, C23C 1600

Patent

active

056743203

ABSTRACT:
A susceptor for a device for epitaxially growing objects of a material on a substrate. The material is selected from the group consisting of SiC, a Group 3B-nitride, and alloys of SiC and a Group 3B-nitride. The susceptor includes at least two channels each adapted to receive at least one substrate for growth of at least one of the objects and each adapted to receive a flow of the material to be fed to the susceptor for the growth of the objects. Walls surround the at least two channels including a central part between the channels. Heat is applied surrounding the susceptor, including the walls and the central part. A higher electrical resistance for induction currents generated by the heating is provided over at least one cross-sectional area of the susceptor. The higher electrical resistance is created by a physical division of the susceptor walls and a thin plate of SiC. The higher electrical resistance extends between the channels of the susceptor and an outer limitation of the susceptor and between separate wall parts of the susceptor.

REFERENCES:
patent: 3098763 (1963-07-01), Deal
patent: 4339645 (1982-07-01), Miller
patent: 4421786 (1983-12-01), Mahajan
patent: 5119540 (1992-06-01), Kong
Kordina, Growth And Characterisation of Silicon Carbide Power Device Material, Paper I, pp. 47-59, Linkoping Studies in Science and Technology, Dissertations No. 352, Department of Physics and Measurement Technology, Linkoping University, Sweden, 1994.

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